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Nd:YVO4
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Chine (Rép. pop) Biens d'équipement
Biens d'équipement

Nd:YVO4

Quantité : 999

Nd: YVO4 crystal is one of the most efficient laser host crystal currently existing for diode laser pumped solid state lasers. Its large stimulated emission cross-section at lasing wavelength, high absorption coefficient and wide absorption bandwidth at pump wavelength, high laser induced damage threshold as well as good physical, optical and mechanical properties make Nd: YVO4 an excellent crystal for high power, stable and cost effective diode pumped solid-state lasers.
Main Features
• Low lasing threshold and high slope efficiency
• Low dependency on pump wavelength
• Large stimulated emission cross-section at lasing wavelength
• High absorption over a wide pumping wavelength bandwidth
• Optically uniaxial and large birefringence emits polarized laser
Typical Applications
• For Single-longitudinal-mode output and compact design
• Diode laser-pumped Nd: YVO4 compact laser and its frequency-doubled green, red or blue laser will be the ideal laser tools of machining, material processing, spectroscopy, wafer inspection, light show, medical diagnostics, laser printing and other most widespread applications
Physical Properties:
Atomic Density
1.26x1020 atoms/cm³ (Nd 1.0%)
Crystal Structure
Zircon Tetragonal, space group D4h-I4/amd
a=b=7.1193, c=6.2892
Density
4.22g/cm3
mols
4-5 (Glass-like)
Thermal Expansivity (300K)
aa=4.43x10-6/K
ac=11.37x10-6/K
Thermal Conductivity
Coefficient (300K)
//C: 0.0523W/cm/K
⊥C: 0.0510W/cm/K
Optical Properties:
Laser Wave
1064nm, 1342nm ,914nm
Thermo-Optical
Coeffecient (300K)
dno/dT=8.5x 10-6/K
dne/dT=2.9x 10-6/K
Sellmeier Equation
no²=3.77834+0.069736/(l2-0.04724)-0.0108133.l²
(for pure YVO4 crystals)
ne²=4.59905+0.110534/(l2-0.04813)-0.0122676.l²
Excited Emission Section
25x 10-19cm² @1064nm
Fluorescence Lifetime
90ms
Absorption Coefficient
31.4cm-1 @810nm
Extrinsic Loss
0.02cm-1 @1064nm
Gain Bandwidth
0.96nm @1064nm
Polarized Light Shoot
polarization; parallel to optic axis(c-axis)
LD Pump Light Throughput Efficiency
>60%
Specifications:
Nd: Dopant Level
0.1 atm% - 3.0 atm%
Wavefront Distortion
< λ/8 @ 633 nm
Orientation
±0.5deg.
Dimension Tolerances
±0.1mm
Surface Quality
10/5 Scratch/Dig per MIL-PRF-13830B
Flatness
λ/10 @ 633 nm
Clear Aperture
> Central 90%
Parallelism
< 10 arc sec
Intrinsic Loss
< 0.1% cm-1

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Personne à contacter : amiee ye,

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Nd:YVO4

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